Coexistence of interface states and confined electronic levels contribution for the light emission of Si nanocrystals embedded in SiO2
| Autor: | Evaldo Ribeiro, Fernando Iikawa, Moni Behar, U.S. Sias, E. Silveira, K.D. Machado, C.C. Baganha, Eduardo Ceretta Moreira, M. J. S. P. Brasil |
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| Rok vydání: | 2019 |
| Předmět: |
Photoluminescence
Materials science Biophysics 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Biochemistry Molecular physics Atomic and Molecular Physics and Optics Spectral line 0104 chemical sciences Matrix (mathematics) Nanocrystal Quantum dot Light emission Optical emission spectroscopy 0210 nano-technology Excitation |
| Zdroj: | Journal of Luminescence. 209:291-294 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2019.01.039 |
| Popis: | This article shows results on photoluminescence measurements of Si nanocrystals embedded in a SiO2 matrix. Photoluminescence spectra were obtained as functions of both temperature (10–510 K) and excitation power (0.01–100 mW). Optical emission bands with interesting behavior as temperature was raised were observed, and a model to explain these bands considering contributions from interface states associated with SiO x and Si–O–Si units, whose emissions are located around 1.32 eV, 1.41 eV and 1.57 eV, and from quantum confinement states associated with the Si nanocrystals, was proposed. |
| Databáze: | OpenAIRE |
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