Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering
| Autor: | Walter Water, Sheng-Joue Young, W.C. Chu, Liang-Wen Ji, Jyh Sheen, W. S. Shih, K.T. Lam, Teen-Hang Meen |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Gate dielectric Analytical chemistry General Chemistry Substrate (electronics) Sputter deposition Condensed Matter Physics Nanocrystalline material Threshold voltage Thin-film transistor Optoelectronics General Materials Science Thin film business Layer (electronics) |
| Zdroj: | Journal of Physics and Chemistry of Solids. 71:1760-1762 |
| ISSN: | 0022-3697 |
| DOI: | 10.1016/j.jpcs.2010.08.024 |
| Popis: | This study demonstrates that nanocrystalline TiO2 thin films were deposited on ITO/glass substrate by radio-frequency magnetron sputtering. Field-emission scanning electron microscope (FE-SEM) and atomic force microscopic (AFM) images showed the morphology of TiO2 channel layer with grain size and root-mean-square (RMS) roughness of 15 and 5.39 nm, respectively. TiO2 thin-film transistors (TFTs) with sputter-SiO2 gate dielectric layer were also fabricated. It was found that the devices exhibited enhancement mode characteristics with the threshold voltage of 7.5 V. With 8-μm gate length, it was also found that the Ion/off ratio and off-state current were around 1.45×102 and 10 nA, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect