Step-by-Step Laser Crystallization of Amorphous Si:H/SiN x :H Multilayer for Active Layer in Microcavities

Autor:	Chen Kun-Ji, Li Wei, Qian Bo, Xu Jun, Chen San, Ma Zhong-Yuan, Liu Yan-Song, Huang Xin-Fan, Cen Zhan-Hong
Rok vydání:	2006
Předmět:	Potential well Photoluminescence Materials science business.industry Analytical chemistry General Physics and Astronomy Nanocrystalline material Active layer law.invention Amorphous solid symbols.namesake Quantum dot law symbols Optoelectronics Crystallization business Raman spectroscopy
Zdroj:	Chinese Physics Letters. 23:1302-1305
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/23/5/066
Popis:	We report the crystallization and photoluminescence (PL) properties of amorphous Si:H/SiNx:H multilayer (ML) films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si (nc-Si) grains are formed in the a-Si:H layers under the constrained growth mechanism. The blue shift of PL peak with grain size is observed and can be attributed to the quantum confinement effect. For comparison, we also report the crystallization and PL of a-Si:H/SiNx:H ML samples by normal one-step treatment. This method of step-by-step laser treatment will be a candidate to make nc-Si quantum dots in amorphous Si:H/SiNx:H ML as an active layer in microcavities.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d3a6150afd34a7749d04fe41a7c3ef87 https://doi.org/10.1088/0256-307x/23/5/066 Zobrazit plný text záznamu