The Influence of Pt in a Ti—Al–Pt–Au Ohmic Contact on n-Type GaN

Autor:	Z. Kachwalla, J. W. Wiggins, W. Wang, Soo Jin Chua
Rok vydání:	1999
Předmět:	Metal Materials science Electrical resistivity and conductivity Phase (matter) visual_art Alloy engineering visual_art.visual_art_medium engineering.material Composite material Condensed Matter Physics Ohmic contact Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (a). 176:779-782
ISSN:	1521-396X 0031-8965
DOI:	10.1002/(sici)1521-396x(199911)176:1<779::aid-pssa779>3.0.co;2-f
Popis:	A number of alternative metallisation has been used to obtain low ohmic contact resistance to n-type GaN. Of these, the most common is the bi-metal alloy of Ti–Al. Typical alloying temperatures used for this process are in the vicinity of 900 °C. We report that the addition of Pt and Au to the ohmic metal provides specific contact resistivity of the order of 4 × 10—5 Ω cm2 at temperatures in the vicinity of 700 °C. This makes the alloying step less demanding on both the material and the processing equipment. The paper also presents the effects of alloying temperature and the influence of the formation of an Al–Pt phase on the quality of the ohmic contact.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d3a17d815bf312f54d97bde90b420b2b https://doi.org/10.1002/(sici)1521-396x(199911)176:1<779::aid-pssa779>3.0.co Zobrazit plný text záznamu Plný text