| Autor: |
I. U. Khan, Mukul Singh, M. A. Ansari, Pragati Tripathi |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 International Conference on Computational and Characterization Techniques in Engineering & Sciences (CCTES). |
| DOI: |
10.1109/cctes.2018.8674083 |
| Popis: |
In this paper, a mathematical modeling of graphene gated graphene GaAs Schottky Junction field effect solar cell has been conducted to obtain J-V curve which is the benchmarked of my research and the characteristics is compared by simulating layers of different semiconductor materials to obtain graphene based solar cell by using Silvaco Atlas tool. Numerical simulation of graphene based Schottky junction solar cells to identify possible future applications of graphene. Copper indium gallium diselenide. Cadmium telluride and amorphous silicon are chosen as the semiconductor bases because of their high absorption coefficient, high / tunable band gap, and the possibility for economical fabrication as compared to single crystal silicon technology. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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