Self-assembled Nanometer-Scale ZnS Structure at the CZTS/ZnCdS Heterointerface for High-Efficiency Wide Band Gap Cu2ZnSnS4 Solar Cells
| Autor: | Xiaojing Hao, Jialiang Huang, Fangyang Liu, Martin A. Green, John A. Stride, Xu Liu, Aobo Pu, Kaiwen Sun, Chang Yan, Heng Sun, Zhao Fang |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Passivation business.industry General Chemical Engineering Wide-bandgap semiconductor Heterojunction 02 engineering and technology General Chemistry Dielectric engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Scanning transmission electron microscopy Materials Chemistry engineering Optoelectronics Kesterite CZTS 0210 nano-technology business Layer (electronics) |
| Zdroj: | Chemistry of Materials. 30:4008-4016 |
| ISSN: | 1520-5002 0897-4756 |
| Popis: | Despite remarkable progress in the performance of kesterite Cu2ZnSnS4 (CZTS)-based photovoltaic technology has been achieved, the interface recombination and associated open-circuit voltage (Voc) deficit still dominate the loss mechanism in this technology. To alleviate heterojunction interface recombination in pure sulfide thin film solar cells, passivation structure at the interface is required. In this work, we developed an ultrathin nanometer-scale ZnS dielectric passivation layer which is readily formed in situ at the CZTS/ZnCdS heterointerface during the ZnCdS buffer deposition process via Zn diffusion from the ZnCdS bulk to the interface. With this nanoscale structure, a remarkable open-circuit voltage and fill factor improvement is illustrated, and a total area efficiency of 9.25% is obtained. The formation and features of the nanoscale ZnS layer are investigated by high-resolution scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. This self-assembled ZnS layer wit... |
| Databáze: | OpenAIRE |
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