Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

Autor: R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, T. Guillet, M. Vladimirova, S. Chenot, Y. Cordier, B. Damilano
Rok vydání: 2022
Zdroj: Physical Review B. 106
ISSN: 2469-9969
2469-9950
Databáze: OpenAIRE