Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design
| Autor: | Kahtan Mezher, J.R. Tellez, M. Al-Daas |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Engineering
business.industry Smith chart Circuit design Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Integrated circuit design Integrated circuit Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Computer Graphics and Computer-Aided Design Capacitance law.invention law Hardware_INTEGRATEDCIRCUITS Scattering parameters Electronic engineering MESFET Electrical and Electronic Engineering business Software Microwave |
| Zdroj: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 13:1489-1497 |
| ISSN: | 0278-0070 |
| DOI: | 10.1109/43.331406 |
| Popis: | A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and substantial savings in CPU execution speed over existing techniques. The new empirical relation is applied successfully to a wide range of silicon and GaAs devices. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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