Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors
| Autor: | Fa-Hsyang Chen, Jim-Long Her, Tung-Ming Pan, Wei-Chen Li, Yu-Hsuan Shao, Yasuhiro H. Matsuda |
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| Rok vydání: | 2013 |
| Předmět: |
Indium gallium zinc oxide
Materials science Annealing (metallurgy) business.industry Gate dielectric Metals and Alloys Surfaces and Interfaces Dielectric Surfaces Coatings and Films Electronic Optical and Magnetic Materials Active layer Threshold voltage Thin-film transistor Materials Chemistry Optoelectronics business High-κ dielectric |
| Zdroj: | Thin Solid Films. 539:251-255 |
| ISSN: | 0040-6090 |
| Popis: | In this paper, we investigated the structural properties and electrical characteristics of high-κ ErTixOy gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). We used X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to investigate the structural and morphological features of these dielectric films after they had been subjected to annealing at various temperatures. The high-κ ErTixOy IGZO TFT device annealed at 400 °C exhibited better electrical characteristics in terms of a large field-effect mobility (8.24 cm2/V-s), low threshold voltage (0.36 V), small subthreshold swing (130 mV/dec), and high Ion/off ratio(3.73 × 106). These results are attributed to the reduction of the trap states and oxygen vacancies between the ErTixOy film and IGZO active layer interface during high-temperature annealing in oxygen ambient. The reliability of voltage stress also can be improved by the oxygen annealing at 400 °C. |
| Databáze: | OpenAIRE |
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