Application Of Optical Microscopy To Dimensional Measurements In Microelectronics

Autor:	N. P. Turner, M. J. Downs
Rok vydání:	1983
Předmět:	Materials science Silicon business.industry Optical engineering chemistry.chemical_element Nanotechnology law.invention Laser linewidth Optical microscope chemistry law Dimensional metrology Optoelectronics Microelectronics Wafer Photomask business
Zdroj:	Microscopy: Techniques and Capabilities.
ISSN:	0277-786X
DOI:	10.1117/12.934330
Popis:	The problems of making accurate measurements of critical dimensions of features on integrated photomasks and silicon wafers are discussed and the currently employed optical measurement techniques described. Sources of systematic uncertainty in such measurements are considered. Measurement equipment developed at NPL and the NPL Photomask Linewidth Standard are described, and approaches to profile measurement of features on silicon wafers are discussed.© (1983) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
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