Features of the fine structure of the fundamental absorption edge in low-doped semiconductor quantum wells with allowance for the Coulomb gap
| Autor: | S. L. Harutyunyan |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Valence (chemistry)
Materials science Condensed matter physics business.industry Doping General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Quantization (physics) Semiconductor Absorption edge Attenuation coefficient Coulomb Condensed Matter::Strongly Correlated Electrons business Quantum well |
| Zdroj: | Journal of Contemporary Physics (Armenian Academy of Sciences). 44:99-103 |
| ISSN: | 1934-9378 1068-3372 |
| DOI: | 10.3103/s1068337209020091 |
| Popis: | Influence of the Coulomb gap on the fine structure of the fundamental absorption edge in quantum wells is studied. Using the interpolation formula, which adequately describes the effect of the Coulomb gap in quantum wells under conditions of low doping regardless of the compensation degree, an explicit expression is obtained for the absorption coefficient related to transitions from the valence level of size quantization to the impurity band. The dependence of the absorption coefficient of a quantum well on the levels of doping and compensation is also studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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