EVOLUTION AND ORDERING OF MULTILAYER Ge QUANTUM DOTS ON Si(001)
| Autor: | Maojie Xu, Xue-sen Wang, M. Jeyanthinath |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon Condensed matter physics Nucleation chemistry.chemical_element Bioengineering Germanium Condensed Matter Physics Computer Science Applications law.invention Crystallography chemistry law Quantum dot Physical vapor deposition General Materials Science Electrical and Electronic Engineering Scanning tunneling microscope Layer (electronics) Biotechnology Solid solution |
| Zdroj: | International Journal of Nanoscience. :579-587 |
| ISSN: | 1793-5350 0219-581X |
| DOI: | 10.1142/s0219581x04002401 |
| Popis: | Evolution and ordering of multilayer Ge islands (up to 14 layers) on Si (001), prepared by physical vapor deposition at about 550°C; were studied using Scanning Tunneling Microscope (STM). In the growth process, it was observed that long huts split during the deposition of Si buffer layer. It can be explained as a consequence of strain due to lattice mismatch and intermixing of Si and Ge to form solid solution. Such a mechanism of splitting could lead the dots to order and uniformity in the subsequent layers. Apart from splitting of huts, the surface corrugation of Si spacer layer influences the nucleation of Ge islands in the next layer. |
| Databáze: | OpenAIRE |
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