Understanding CrGeTe3: an abnormal phase change material with inverse resistance and density contrast
| Autor: | Meng Xu, Xiangshui Miao, Kai-Ming Ho, Xiaomin Cheng, Hao Tong, Ming Xu, Cai-Zhuang Wang, Zhenhai Yu, Songyou Wang, Y. R. Guo, Chao Chen, Kailang Xu |
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| Rok vydání: | 2019 |
| Předmět: |
Dynamic random-access memory
Materials science Condensed matter physics 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Atomic packing factor 01 natural sciences Phase-change material 0104 chemical sciences Amorphous solid law.invention Phase-change memory Non-volatile memory law Materials Chemistry Thermal stability Crystallization 0210 nano-technology |
| Zdroj: | Journal of Materials Chemistry C. 7:9025-9030 |
| ISSN: | 2050-7534 2050-7526 |
| Popis: | Phase change memory is an emerging nonvolatile memory technology, recently becoming the center of attention to bridge the speed gap between fast dynamic random access memory and slow flash-based solid-state drives. Lately, CrGeTe3 has been investigated as a special phase change material with an inverse resistance and density change. This material has excellent properties such as good thermal stability, ultralow-energy glass formation process and almost zero mass-density change upon crystallization. Here, we analyzed the amorphous structure of this abnormal material in detail through ab initio simulations and discovered that the metallic-like tight atomic packing is the origin of the high carrier concentration and high mass density in the amorphous phase. Furthermore, the bonding analysis confirms that it is the short Cr–Cr bonds that lead to high packing efficiency in the amorphous local order. Our results discovered the material gene of the amorphous CrGeTe3, paving the way for the design of high-performance memory devices based on this material. |
| Databáze: | OpenAIRE |
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