Anisotype-gate self-aligned p-channel heterostructure field-effect transistors
| Autor: | William J. Ooms, J.A. Hallmark, Jenn-Hwa Huang, Jonathan K. Abrokwah |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Transconductance Semiconductor device Capacitance Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Semiconductor chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Electronic circuit Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 40:278-284 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.182501 |
| Popis: | A new self-aligned p-channel HFET structure was evaluated for application to complementary HFET circuits. The AlGaAs/InGaAs HFET structure uses an anisotype graded n/sup +/ InGaAs/GaAs semiconductor gate to enhance the barrier height of the FET, resulting in a significant reduction in gate leakage current at low voltages. With AlGaAs composition of x=0.3, and a thin AlAs spacer of 60 AA, leakage current was reduced by a factor of about 1000 at gate voltage of 1 V, when compared to AlGaAs/InGaAs HIGFET of aluminum content x=0.75. The anisotype PFET maintains high device transconductance, typically 50 mS/mm for 1.3*10 mu m PFETs, high reverse breakdown voltages 9-10 V, and low capacitance. Microwave S-parameter characterization resulted in F/sub t/ of 5 GHz for a 1*50 mu m PFET. > |
| Databáze: | OpenAIRE |
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