Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy
| Autor: | A. Mayeux, C. Bonnelle, M. Firon |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Silicon oxynitride Silicon Absorption spectroscopy Infrared Analytical chemistry chemistry.chemical_element Infrared spectroscopy Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Thin film Refractive index |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2488-2492 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.580007 |
| Popis: | Silicon oxynitride thin films deposited by plasma enhanced chemical vapor deposition on various substrates have been characterized by infrared reflection absorption spectroscopy. Shifts of the LO Si–O vibrational band to lower wave numbers have been observed with increasing N content and also with the thickness of the films. We observe that the ratio of LO Si–O vibrational mode wave number to film thickness (υ/t) varies linearly with the ratio of refractive index to thickness (n/t). This linear relationship does not depend on the nature of substrates on which films are deposited (Al/Si, Si, Si/Al). Our results show that the composition of silicon oxynitride films could be determined directly by measuring the LO Si–O mode position. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|