Deep level transient spectroscopy of interfacial traps at ion‐implanted ultrahighp‐Si Schottky barriers

Autor:	S. Ashok, John H. Slowik
Rok vydání:	1986
Předmět:	Ion implantation Deep-level transient spectroscopy Physics and Astronomy (miscellaneous) Silicon Chemistry Schottky barrier Analytical chemistry chemistry.chemical_element Schottky diode Thermionic emission Semimetal Ion
Zdroj:	Applied Physics Letters. 49:1784-1786
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.97244
Popis:	Sequential implantation of Ar and low‐energy H produces a high (0.83 eV), near‐ideal Schottky barrier for Al deposited on p‐Si. Deep level transient spectroscopy (DLTS) measurements reveal majority‐carrier interfacial traps due to the implantation steps. Without H, Ar implantation alone results in an interfacial trap doublet at 0.48 eV with high emission rates. Such samples display an elevated barrier relative to the implanted control samples, but with serious leakage current. When H implant is added, however, only a single interfacial trap, with a very low emission rate, is present at 0.47 eV. Thus DLTS suggests that H may idealize the barrier by substituting interfacial traps having reduced charge transport rate, so that there is less competition with thermionic emission.
Databáze:	OpenAIRE
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