Autor:	Valery I. Rudakov, Vladimir V. Ovcharov
Rok vydání:	2006
Předmět:	Silicon chemistry Annealing (metallurgy) chemistry.chemical_element Thermodynamics
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.681764
Popis:	gradient VT and heat of transport Q* onconcentration profiles is carried out for diffusion from an instantaneous plane source and an extended source of infiniteextent. The estimations of heats of transport of the P and B in silicon are made at nonisothermal annealing. The obtainedresults correspond to theoretical estimations and give meanings of heat of transport 1 o
Databáze:	OpenAIRE
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