157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
| Autor: | Shigeo Irie, Seiichi Ishikawa, Takuya Hagiwara, Tamio Yamazaki, Takamitsu Furukawa, Toshiro Itani, Yasuhide Kawaguchi, Syun-ichi Kodama, Osamu Yokokoji, Isamu Kaneko, Yoko Takebe, Shinji Okada |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy Photoresist Laser Numerical aperture law.invention chemistry.chemical_compound Resist chemistry law Attenuation coefficient Polymer chemistry Optoelectronics Fluoropolymer Solubility business Lithography |
| Zdroj: | Japanese Journal of Applied Physics. 42:3743-3747 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | Fluoropolymers are key materials for single layer resists of 157-nm lithography. We have been studying fluoropolymers to identify their potential for base resins of 157-nm photoresist. New monocyclic fluoropolymer resist which we developed have high optical transparency with an absorption coefficient lower than 1.0/spl mu/m/sup -1/, and non-swelling solubility in standard developer. As the exposed results by 157-nm laser microstepper (numerical aperture = 0.85) using a new fluoropolymer based resist, the 65-nm lines and spaces pattern was obtained at a 200-nm film thickness. |
| Databáze: | OpenAIRE |
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