CO laser-induced cooling of the conduction electrons in n-InSb
| Autor: | L.K. Hanes, D.G. Seiler |
|---|---|
| Rok vydání: | 1980 |
| Předmět: |
Physics
Band gap Physics::Optics Electron Thermal conduction Laser Acceptor Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law Electric field Physics::Atomic Physics Electrical and Electronic Engineering Physical and Theoretical Chemistry Atomic physics Absorption (electromagnetic radiation) Quasi Fermi level |
| Zdroj: | Optics Communications. 34:89-94 |
| ISSN: | 0030-4018 |
| DOI: | 10.1016/0030-4018(80)90166-2 |
| Popis: | Laser-induced cooling of the conduction electrons in n-InSb is observed for CO laser photon energies near the bandgap (229–234 meV). This cooling is caused by a new mechanism which we call cold electron photo-injection (CEPI) produced by the simultaneous application of a non-ohmic dc electric field and the CO radiation. The results show that absorption near the bandgap is strongly influenced by two acceptor levels located at ~3 and ~8 meV above the valence band edge. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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