Autor: |
Dirk J. Gravesteijn, G. Verheijden, Lucile Broussous, Romano Hoofman, R. Chatterjee, Kathleen C. Yu, C. Prindle, Joaquim Torres, M. Assous, F. Fusalba, Vincent Arnal, L.G. Gosset, Roel Daamen |
Rok vydání: |
2004 |
Předmět: |
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Zdroj: |
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695). |
DOI: |
10.1109/iitc.2003.1219714 |
Popis: |
The present paper deals with the different techniques investigated in the whole microelectronics community to integrate air cavities, usually known as air gaps, in-between copper lines for advanced interconnects. The different integration processes were split into two categories, i.e. (i) using a non-conformal CVD deposition inside patterned trenches and (ii) by removing a sacrificial material using a specific technological operation. Advantages and drawbacks of the different approaches will be discussed, including integration issues, manufacturability, and electrical performances. The aim of the paper is to sensitize the BEOL community on these specific approaches that now appear attractive considering the electrical performances required for 45 nm and below technological nodes. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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