Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor
| Autor: | Shashank C. Deshmukh, Demetre J. Economou, Sri Prakash Rangarajan, David M. Hoffman, Wei-Kan Chu, Jiarui Liu, Zongshuang Zheng, Satish D. Athavale |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Hybrid physical-chemical vapor deposition Mechanical Engineering Analytical chemistry Nitride Combustion chemical vapor deposition Condensed Matter Physics chemistry.chemical_compound Carbon film Silicon nitride chemistry Mechanics of Materials Plasma-enhanced chemical vapor deposition General Materials Science Thin film Plasma processing |
| Zdroj: | Journal of Materials Research. 9:3019-3021 |
| ISSN: | 2044-5326 0884-2914 |
| Popis: | Silicon nitride films are grown by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)silicon, Si(NMe2)4, and ammonia precursors at substrate temperatures of 200-400 °C. Backscattering spectrometry shows that the films are close to stoichiometric. Depth profiling by Auger electron spectroscopy shows uniform composition and no oxygen or carbon contamination in the bulk. The films are featureless by scanning electron microscopy under 100,000X magnification. |
| Databáze: | OpenAIRE |
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