Singlet oxygen inhibits nonradiative defects in porous silicon
| Autor: | V. B. Pikulev, V. A. Gurtov, S. N. Kuznetsov, Alexandr Kuznetsov, A. A. Saren |
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| Rok vydání: | 2009 |
| Předmět: |
inorganic chemicals
Photoluminescence Silicon Singlet oxygen technology industry and agriculture chemistry.chemical_element Surfaces and Interfaces equipment and supplies Condensed Matter Physics Porous silicon Photochemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Adsorption chemistry Materials Chemistry Singlet state Physics::Chemical Physics Electrical and Electronic Engineering Porous medium Non-radiative recombination |
| Zdroj: | physica status solidi (a). 206:1268-1272 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.200881055 |
| Popis: | Experimental evidences are presented for the first time that singlet oxygen generated ex situ acts as an inhibitor of nonradiative recombination in porous silicon (PSi). This effect is observed on a pristine PSi as well as on degraded porous layers quenched by ozone adsorption. A photoluminescence (PL) enhancement produced by singlet oxygen is accompanied with only slight oxidation of a PSi. We assume that the observed effect on PL efficiency is due to gentle selective oxidation of single defects on silicon nanocrystal surface. |
| Databáze: | OpenAIRE |
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