Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

Autor:	Bernard Beaumont, Mathieu Leroux, M. Laügt, P. Vennéguès, Hacene Lahreche, O. Tottereau, Pierre Gibart, P. Lorenzini
Rok vydání:	2000
Předmět:	Diffraction Materials science business.industry Surface finish Condensed Matter Physics Epitaxy Inorganic Chemistry Crystallography Full width at half maximum Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Thin film Dislocation business Fermi gas
Zdroj:	Journal of Crystal Growth. 217:13-25
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(00)00478-4
Popis:	Single-crystal GaN thin films (500 nm) were grown by low-pressure metal-organic vapour-phase epitaxy (LP-MOVPE) on Si(1 1 1) substrates using AlN buffer layers. Depending on the AlN growth temperature, the growth mode of GaN can be either two- or three-dimensional (2D or 3D) and structural, electronic and optical properties of GaN layers are consequently changed. 2D growth leads to the best material with a full-width at half-maximum (FWHM) of the (0 0 0 2) X-ray diffraction (XRD) line in rocking curve for GaN of about 656 arcsec, a dislocation density in the low 10 10 cm −2 range and a surface root-mean-square (RMS) roughness as low as 0.3 nm. AlGaN/GaN two-dimensional electron gas (2DEG) were grown on such layers and mobility of μ =813 cm 2 /V s at 300 K and μ =2200 cm 2 /V s at 77 K were obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d32da0a88eb6a4843f59f2307c80dc22 https://doi.org/10.1016/s0022-0248(00)00478-4 Zobrazit plný text záznamu Full Text from ScienceDirect