Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices
| Autor: | Yow-Jon Lin, Chang Lin Wu, Hsing-Cheng Chang, Zun Yuan Ke |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Graphene Doping Oxide General Physics and Astronomy Conductivity 01 natural sciences Poly(methyl methacrylate) law.invention chemistry.chemical_compound Chemical engineering chemistry law visual_art 0103 physical sciences visual_art.visual_art_medium Thin film Methyl methacrylate Current density |
| Zdroj: | Indian Journal of Physics. 94:1209-1214 |
| ISSN: | 0974-9845 0973-1458 |
| DOI: | 10.1007/s12648-019-01568-7 |
| Popis: | This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-type Si (p+-Si) and Au/PMMA:RGO/p+-Si devices. The effect of RGO content on the RS properties is also determined. The Au/PMMA/p+-Si device exhibits set/reset–free current–voltage characteristics because of the insulating properties of PMMA. However, the Au/PMMA:RGO/p+-Si device exhibits RS behavior. Incorporating RGO into PMMA results in an increase in conductivity, the formation of PMMA–RGO interfaces and a significant increase in the trap density at the PMMA/RGO interfaces, so the RS performance is improved for Au/PMMA:RGO/p+-Si devices. It is shown that the current density for Au/PMMA:RGO/p+-Si devices is limited by the combined effect of ohmic conduction, space-charge-limited current conduction and trap-filled limited current conduction. An excess amount of RGO in PMMA does not result in any memory effect during the forward- and reverse-biased sweeps because there is a significant increase in the conductivity of PMMA:RGO film. |
| Databáze: | OpenAIRE |
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