Capture and emission kinetics of individual Si:SiO2interface states

Autor:	M. J. Uren, M. J. Kirton
Rok vydání:	1986
Předmět:	Physics and Astronomy (miscellaneous) Silicon Chemistry Kinetics Transistor Analytical chemistry chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention law Ionization MOSFET Field-effect transistor Charge carrier Atomic physics Carrier capture
Zdroj:	Applied Physics Letters. 48:1270-1272
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.97000
Popis:	By studying the random telegraph signals in the drain current of small area metal‐oxide‐semiconductor field‐effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap energy levels are temperature dependent as a result of entropy changes on trap ionization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d326a67b52dfbfad5d0fb6d726960a37 https://doi.org/10.1063/1.97000 Zobrazit plný text záznamu