Autor:	A. A. Povzner, O. V. Anoshina, L. F. Romasheva, A. G. Volkov
Rok vydání:	2002
Předmět:	Resistive touchscreen Materials science stomatognathic system Condensed matter physics Scattering Magnet Electron concentration General Physics and Astronomy Electronic structure Negative temperature Spectral line
Zdroj:	Russian Physics Journal. 45:1195-1202
ISSN:	1064-8887
DOI:	10.1023/a:1023822520861
Popis:	The resistance of FexCo1–xSi and FexMn1–xSi weak band magnetic materials in the temperature interval 4.2–300 K is measured. Based on the experimental data, the conversion from semiconducting and submetallic materials with negative temperature resistance coefficients (TRC) to materials with positive TRC caused by the electron concentration is described. It is demonstrated that the main reason for the conversion of the electronic structure is splitting of s-, p- and d-electronic spectra in fluctuating exchange fields. As a result, the number of current carriers increases significantly with the temperature. The competition of this effect with electron-phonon scattering is the basic mechanism of forming resistive states with abnormally low TRC in the examined weak band magnetic materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d3265980494a0db2f0953f284b28b730 https://doi.org/10.1023/a:1023822520861 Zobrazit plný text záznamu Full text from SpringerLink