W-band push—push monolithic frequency doubler in 1-μm InP DHBT technology

Autor: Hongfei Yao, Danyu Wu, Yongbo Su, Zhi Jin, Xiaoxi Ning, Ji Ge, Yuxiong Cao, Xiantai Wang
Rok vydání: 2013
Předmět:
Zdroj: Journal of Semiconductors. 34:095006
ISSN: 1674-4926
DOI: 10.1088/1674-4926/34/9/095006
Popis: A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push—push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 × 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below −16 dBc and the conversion gain above 4.7 dB over 75–80 GHz.
Databáze: OpenAIRE