Time-Resolved Photoluminescence Studies of AlInGaN Alloys

Autor:	Wang Zhan-Guo, Li Da-Bing, Liu Xiang-Lin, Huang Jin-Song, Dong Xun, XU Zhong-Ying
Rok vydání:	2003
Předmět:	Photoluminescence Materials science Condensed matter physics General Physics and Astronomy chemistry.chemical_element Molecular physics chemistry Quantum dot Picosecond Spontaneous emission Exponential decay Luminescence Spectroscopy Indium
Zdroj:	Chinese Physics Letters. 20:1148-1150
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/20/7/351
Popis:	We study the two samples of AIInGaN, i.e., 1-mum GaN grown at 1030degreesC on the buffer and followed by a 0.6-mum-thick epilayer of AIInGaN under the low pressure of 76 Torr and the AIInGaN layer deposited directly on the buffer layer without the high-temperature GaN layer, by temperature-dependent photoluminescence (PL) spectroscopy and picosecond time-resolved photoluminescence (TRPL) spectroscopy. The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures, indicating significant disorder in the material. We attribute the disorder to nanoscale quantum dots or discs of high indium concentration. Temperature dependence of dispersive exponent beta shows that the stretched exponential decay of the two samples comes from different mechanisms. The different depths of the localization potential account for the difference, which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d318781f6c3bbcd7372d248c4cf87aa0 https://doi.org/10.1088/0256-307x/20/7/351 Zobrazit plný text záznamu