Autor: |
Sunyoung Sohn, Semyoung Oh, Sungi Jang, Kwangsoo Lee, Hyung Jun Park, Heeyeop Chae, J. Yi, Hyunmin Kim, Donggeun Jung, J.H. Lee |
Rok vydání: |
2008 |
Předmět: |
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Zdroj: |
Thin Solid Films. 516:1370-1373 |
ISSN: |
0040-6090 |
Popis: |
Admittance spectroscopic analysis was used to examine the effect of a CF X plasma surface treatment on indium tin oxide (ITO) anodes using CF 4 gas and model the equivalent circuit for organic light emitting diodes (OLEDs) with the of ITO anode surface treated with CF X plasma. This device with the ITO/ N , N ′-diphenyl- N , N ′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine/tris-(8-hydroxyquinoline) aluminum/lithium fluoride/Al structure was modeled as a simple combination of two resistors and a capacitor. The ITO anode surface treated with the CF X plasma showed a shift in the vacuum level of the ITO, which resulted in a decrease in the barrier height for hole injection at the ITO/organic interface. Admittance spectroscopy measurements of the devices with the CF X plasma treatment on the surface of the ITO anodes showed a change in the contact resistance, bulk resistance and bulk capacitance. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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