Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor
| Autor: | Y.B. Hahn, Hyung Jae Lee, H.W. Shim, Young Hun Seo, Eun-Kyung Suh, Sun Jung Kim, Kee Suk Nahm, Kee Young Lim |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Photoluminescence Solid-state physics Thermal chemical vapor deposition Hydrogen Analytical chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Materials Chemistry Spontaneous emission Electrical and Electronic Engineering Thin film Luminescence |
| Zdroj: | Journal of Electronic Materials. 28:970-974 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0206-8 |
| Popis: | The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD) reactor. GaN films emitted two different luminescence energies, 2.2 and 3.47 eV, depending on the introducing position of hydrogen gas in the growth reactor. The distribution of the TMGa flow and gas phase reactions in the reactor were investigated to understand the effect of the gas feeding methods on the optical properties of GaN films. The results suggest that YL is related to Ga vacancies in the grown films. |
| Databáze: | OpenAIRE |
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