P-Channel MOS Sensor for Measurement of Emergency Gamma and Neutron Irradiation
| Autor: | V.I. Khivrich, L.I. Barabash, P.G. Litovchenko, I.A. Marusan, Anatoly B. Rosenfeld, M. B. Pinkovska, V.I. Kuts |
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| Rok vydání: | 1996 |
| Předmět: |
Radiation
Materials science Radiological and Ultrasound Technology business.industry Public Health Environmental and Occupational Health Gamma ray Oxide General Medicine Neutron radiation Ionizing radiation Threshold voltage chemistry.chemical_compound chemistry Gate oxide Optoelectronics Radiology Nuclear Medicine and imaging Nuclear medicine business Sensitivity (electronics) |
| Zdroj: | Radiation Protection Dosimetry. 66:225-228 |
| ISSN: | 1742-3406 0144-8420 |
| Popis: | A dosemeter for mixed gamma-neutron fields using p-MOSFET with thick oxide has been designed and studied. A positive charge is stored in the gate oxide under ionising radiation, and threshold voltage shifts can be used to measure the gamma ray component. The basic material is high resistivity Si and changes of forward bias of drain-base or source-base curves are useful to measure the fast neutron dose. The sensitivity for gamma radiation was found to be 100 mV.Gy -1 , compared to that for neutron radiation, ∼ 30 mV.Gy -1 . |
| Databáze: | OpenAIRE |
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