Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

Autor:	D. Brasen, K. W. Evans‐Lutterodt, G. S. Higashi, J. L. Dawson, L. Manchanda, T. Boone, K. Krisch, Martin L. Green, Mau‐Tsu Tang
Rok vydání:	1995
Předmět:	Diffraction Materials science Condensed matter physics Silicon Interface (computing) Oxide General Physics and Astronomy chemistry.chemical_element Equivalent oxide thickness Kinetic energy Amorphous solid Crystallography chemistry.chemical_compound chemistry
Zdroj:	Journal of Applied Physics. 77:4746-4749
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.359410
Popis:	Using x‐ray diffraction techniques, we measure the root‐mean‐square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness; the oxide growth process kinetically smoothens the buried interface. We also find a difference between the rate of smoothing for wet and dry oxides.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d2f2c84e059b0e900d22b4c312062b33 https://doi.org/10.1063/1.359410 Zobrazit plný text záznamu