Influence of substrate movement on the ITO film thickness distribution during magnetron sputtering
| Autor: | S. N. Abolmasov, I. A. Nyapshaev, Alexander S. Starkov, Ivan A. Starkov, Vladimir S. Levitskii, Evgeny I. Terukov, Alexey S. Abramov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Analytical chemistry 02 engineering and technology Surfaces and Interfaces Substrate (electronics) Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Indium tin oxide Sputtering Shield 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business Layer (electronics) Deposition (law) |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:061301 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.4991527 |
| Popis: | In this paper, the influence of the translational/rotational movement of the substrate on the thickness distribution of the deposited indium tin oxide (ITO) layer during magnetron sputtering is studied. The ITO films were fabricated in a sputtering system equipped with a circular planar magnetron and then compared with the calculated deposition profiles. For the latter purpose, the distribution of emitted particles appear to be successfully described by the cosinelike (Lambert–Knudsen) law. The comparison results indicate that the presence of the substrate motion is equivalent to the change of the deposition angle in a nonlinear manner controlled by the ratio between the substrate and the effective sputtering velocities. The complete reproduction of the measurement results of the calculations confirms validity of the approach. The study findings provide a distinctive way to predict the film thickness distribution and allow to design a restrictive shield to improve film uniformity in planar magnetron sputt... |
| Databáze: | OpenAIRE |
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