Damage Calculations for Devices in the Diagnostic Penetrations of a Fusion Reactor
| Autor: | A. G. Holmes-Siedle, J. M. Battaglia, B. A. Engholm, J. F. Baur |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry Nuclear engineering technology industry and agriculture Shields chemistry.chemical_element Semiconductor device Fusion power equipment and supplies Semiconductor Nuclear Energy and Engineering chemistry Shield Hardening (metallurgy) Electronic engineering Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 31:1106-1112 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1984.4333464 |
| Popis: | Degradation of neutron-sensitive devices for fusion diagnostics is calculated as a function of location in ducts through bulk shields. It is shown that single-crystal semiconductor devices, such as n/p silicon diodes, will undergo severe degradation even at the rear of the shield. It will be necessary to replace devices at frequent intervals or withdraw semiconductor parts after a measurement. Device life can be extended by distance, elbows, shortening of exposure. hardening, or a combination thereof. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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