EPR study of porous silicon
| Autor: | Mao Jin-Chang, Zhang Yu-Hua, Fu Ji-Shi, Wu En, Zhang Bo-Rui, Zhang Li-Zhu, Qin Guo-Gang, Jia Yongqiang, Wui Genshuan |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Annealing (metallurgy) Analytical chemistry Dangling bond chemistry.chemical_element Condensed Matter Physics Porous silicon Oxygen Atomic and Molecular Physics and Optics law.invention Nuclear magnetic resonance chemistry law Physical and Theoretical Chemistry Porosity Electron paramagnetic resonance Anisotropy |
| Zdroj: | Hyperfine Interactions. 84:109-114 |
| ISSN: | 1572-9540 |
| DOI: | 10.1007/bf02060649 |
| Popis: | An anisotropic EPR signal was observed in porous Si. According to its symmetry andg value, the EPR signal can be attributed to silicon dangling bonds located on the surface of a porous Si skeleton. The evolution of the EPR signal at room temperature in air was measured. The annealing temperature dependence of the EPR and the PL of porous Si in oxygen and the effects of gamma irradiation on the EPR and the PL spectra of porous Si were studied. The changes of the EPR signal and the PL intensity induced in atmosphere by ethyl alcohol and acetone were discovered. The dangling bond is only one of the factors which affect the PL. |
| Databáze: | OpenAIRE |
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