Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates
| Autor: | John Twynam, Hong Goo Choi, Sung-Dal Jung, Sungwon D. Roh, Jong Sub Lee, Jeong Soon Yim, Deok-Won Seo, Heejae Shim, Sung-Woon Moon |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Passivation business.industry Electrical engineering High voltage Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry Gate oxide Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business AND gate Leakage (electronics) |
| Zdroj: | Solid-State Electronics. 96:19-21 |
| ISSN: | 0038-1101 |
| Popis: | We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal–oxide–semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0–700 V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect