The Influence of the Energy of Ar$${}^{\mathbf{+}}$$ Ion Implantation on the Photoluminescence of Porous Silicon
| Autor: | V. V. Chernysh, Andrey A. Shemukhin, A. V. Kozhemiako, A.V. Nazarov, Yu. M. Spivak, E. N. Muratova |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Photoluminescence Physics::Instrumentation and Detectors 010308 nuclear & particles physics General Physics and Astronomy Porous silicon 01 natural sciences Fluence Molecular physics Ion Ion implantation 0103 physical sciences Irradiation 010306 general physics Luminescence Surface states |
| Zdroj: | Moscow University Physics Bulletin. 75:590-595 |
| ISSN: | 1934-8460 0027-1349 |
| Popis: | Irradiation of porous silicon with Ar $${}^{+}$$ ions at energies from 100 to 400 keV and fluence of $$10^{12}$$ cm $${}^{-2}$$ was carried out. The effect of ion irradiation at different energies of incident particles on the photoluminescence spectrum of porous silicon has been studied. it has been shown that the photoluminescence spectrum consists of two components. One of then is associated with the presence of structural defects; another, with the surface states on the complex surface of porous silicon. A method for estimating the thickness of the luminescent layer based on the analysis of the photoluminescence peak associated with defects is proposed. |
| Databáze: | OpenAIRE |
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