POLO Back Junction: An Elegant Way to Implement Electron-Collecting Passivating Contacts in p-Type Industrial Silicon Solar Cells

Autor:	Min, B., Merkle, A., Brendemühl, T., Wehmeier, N., Larionova, Y., Beier, B., David, L., Schulte-Huxel, H., Dullweber, T., Peibst, R., Brendel, R.
Jazyk:	angličtina
Rok vydání:	2020
Předmět:	High Temperature Route for Si Cells Silicon Materials and Cells
DOI:	10.4229/eupvsec20202020-2ao.6.4
Popis:	37th European Photovoltaic Solar Energy Conference and Exhibition; 170-172 We demonstrate the fabrication of screen-printed p-type back junction solar cells with an aluminum front grid and a poly-Si on oxide electron-collecting passivating contact at the rear side. The high potential of this cell concept is demonstrated with an implied open-circuit voltage of 730 mV and an implied filled factor of 85.5 %, measured on a cell precursor. The best cell from a batch of 7 cells has an open-circuit voltage of 695.6 mV and an efficiency of 22.3 %, independently confirmed by ISFH CalTeC.
Databáze:	OpenAIRE
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