Preparation of YBaCuO and BiSrCaCuO thin films and low temperature annealing effects
| Autor: | G. Poullain, Thierry Brousse, J.F. Hamet, B. Blanc-Guilhon |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Magnetic measurements
Materials science Annealing (metallurgy) Mechanical Engineering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Laser law.invention Bismuth chemistry Mechanics of Materials law General Materials Science Critical current Thin film Oxygen pressure Argon atmosphere |
| Zdroj: | Materials Science and Engineering: B. 13:35-41 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(92)90100-n |
| Popis: | YBaCuO and BiSrCaCuO thin films were prepared by a laser deposition method and characterized by electric and magnetic measurements. The substrate temperature and oxygen pressure during the cooling process were found to be the two important parameters for the growth of in situ YBaCuO thin films. For the bismuth compounds, the ([ Bi ]:[ Sr ]:[ Ca ]:[ Cu ] = ) 2:2:1:2 phase was reproducibly prepared on MgO substrates with critical temperatures of 80–83 K and critical current densities above 103 A cm−2 at 77 K. Low temperature annealing treatments (at 350 °C in an argon atmosphere) can increase the critical temperature up to 89 K. The same behaviour is reported for lead-doped 2:2:1:2 films, with critical temperatures of 72–76 K before and 82–85 K after the 350 °C post-annealing treatment.The 2:2:2:3 phase was also investigated and the best film showed a critical temperature of 110 K and a critical current density of 5×10 4 A cm −2 at 77 K. |
| Databáze: | OpenAIRE |
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