Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation
| Autor: | Rongmei Chen, Wei Chen, Wang Tan, Huabo Sun, Xiaoyu Pan, Lili Ding, Luo Yinhong, Fengqi Zhang, Lei Chen |
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| Rok vydání: | 2019 |
| Předmět: |
Nuclear and High Energy Physics
010308 nuclear & particles physics Circuit level simulation Computer science Semiconductor device modeling Charge (physics) Mechanics 01 natural sciences Nuclear Energy and Engineering 0103 physical sciences Path (graph theory) Inverter Electrical and Electronic Engineering Diffusion (business) Current (fluid) Event (particle physics) |
| Zdroj: | IEEE Transactions on Nuclear Science. 66:866-874 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2019.2904716 |
| Popis: | The dependence of single-event transients on strike location is studied and integrated into the bias-dependent single-event model for circuit simulation. Two nondimensional parameters are introduced, including a drift factor and a diffusion factor to produce the accurate single-event current pulse consisting of drift and diffusion components for each related active region. By translating into the bias-dependent model, considering the current path between well contacts, and modeling the impact of bipolar amplification effects, it is able to predict the charge collection when striking at various strike locations. Circuit-level simulation results agree well with TCAD ones for various circuit blocks, including a single inverter, inverter chains of various layout designs, and OR3 gate. In addition, good agreement with experimental results has been reached, proving the reasonableness of the proposed circuit-level single-event effect (SEE) simulation approach. |
| Databáze: | OpenAIRE |
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