Optical loss analysis of silicon solar cells using spatial resolved quantum efficiency and reflectance measurements
| Autor: | Kristopher O. Davis, Eric Schneller, Kortan Ogutman, Winston V. Schoenfeld |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Spatially resolved chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Reflectivity Optics Quality (physics) chemistry 0103 physical sciences Optoelectronics Quantum efficiency Single point 0210 nano-technology business |
| Zdroj: | 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc.2016.7750099 |
| Popis: | IQE data has long been a key analysis tool for c-Si cell research. Transitioning from single point measurements to spatially resolved measurements allows for the detailed analysis of quality and uniformity of the processes and materials used in cell manufacturing. This work explores how spatially resolved reflectance data can be analyzed to provide valuable information regarding the front surface texturing, rear surface properties, and ARC properties of completed solar cells. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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