| Autor: |
Tseng Wu Han, Kuo Shuen Chao, Huang Kuan Chieh |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA). |
| Popis: |
TAF is a necessary value for calculating the operation Lifetime of IC product. The activation energy (Ea) is the parameter value required to calculate the TAF. Each company has different ways of obtaining activation energy (Ea). Some used function test pass/fail and also current change. Our method is based on the characteristics of SRAM products and the memory unit data storage capacity was used. The activation energy (Ea) value was calculated by analyzing the decay of the lowest operating voltage of the data after two kinds of accelerations at high temperature and high bias. After the experiment, we obtained the activation energy (Ea) value of 0.81eV. The relevant research are all in this paper. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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