On the Possibility to Reduce the Power Consumption of FET-Based Amplifiers by the Drastic Reduction in Supply Voltages

Autor:	A.M. Korolev
Rok vydání:	2007
Předmět:	Engineering Ground business.industry Amplifier Transistor Electrical engineering Transistor array law.invention law Current sense amplifier Electronic engineering Field-effect transistor business Microwave Voltage
Zdroj:	2007 International Kharkiv Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW).
DOI:	10.1109/msmw.2007.4294798
Popis:	This paper reports on the successful development of an efficient method of the power consumption reducing without recourse either to cooling or to transistor periphery scaling. An approach proposed is based on applying the field-effect transistor (FET) having (initially, in saturated I-V region) an excessive-high cut-off-frequency and sacrificing their gain after changing to linear I-V region. Discussions of the theoretical grounding and experimental results of the implementation of this method to the design of low-noise amplifiers (LNAs) for radiofrequency (RF) as well as microwave bands, are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d2b0f1a2e01283fc214ca593bd650edf https://doi.org/10.1109/msmw.2007.4294798 Zobrazit plný text záznamu