Direct patterning of spin-on glass with 157 nm lithography: Application to nanoscale crystal growth

Autor:	Theodore M. Bloomstein, S. J. Deneault, N. N. Efremow, A. Napoleone, Douglas C. Oakley, D. E. Hardy, Paul W. Juodawlkis, R. B. Swint, Susan G. Cann, M. F. Marchant, Mordechai Rothschild
Rok vydání:	2005
Předmět:	chemistry.chemical_compound Materials science Spin glass Nanolithography chemistry General Engineering Nanotechnology Crystal growth Epitaxy Hydrogen silsesquioxane Nanoscopic scale Lithography Interference lithography
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:2617
ISSN:	0734-211X
DOI:	10.1116/1.2101692
Popis:	Selective area homoepitaxial growth of InP in 50nm scale dense features has been demonstrated using hydrogen silsesquioxane (HSQ) as the growth mask. The HSQ growth mask was patterned lithographically using high resolution interference lithography at 157nm. Lithographic process conditions were optimized, including postapplication bake temperature, developer normality, and oxygen levels during exposure.
Databáze:	OpenAIRE
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