DC Drift of$hboxZ$-Cut$hboxLiNbO_3$Modulators

Autor:	Yagang Li, H. Nagata, W.R. Bosenberg, Gilbert D. Feke
Rok vydání:	2004
Předmět:	Materials science business.industry Optical testing Biasing Activation energy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Acceleration Nonlinear system Optics Reliability (semiconductor) Electrical and Electronic Engineering Atomic physics business
Zdroj:	IEEE Photonics Technology Letters. 16:1655-1657
ISSN:	1041-1135
DOI:	10.1109/lpt.2004.829545
Popis:	DC drift characteristics of z-cut LiNbO/sub 3/ modulators with oxide buffer layers were studied with respect to their acceleration factors and long-term reliability. Analysis of more than 120 data points of measured drift tests indicate a slight nonlinear contribution by the starting bias voltage Vs to drift acceleration, with a factor equal to Vs/sup 1.27/. However, the observed nonlinearity is shown to have little affect on reliability estimations due to a dominant contribution from temperature activation energy; Ea=1.1 eV. The dc drift failure rates are estimated to be on the order of tens of failures in time for 20 years at 55/spl deg/C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d2ae24fdbc36f199ee0488b14346e386 https://doi.org/10.1109/lpt.2004.829545 Zobrazit plný text záznamu