A Modified Photoresist Resistant to Oxygen Plasmas
| Autor: | Stephen M. Bobbio, S. P. Ashburn, T.D. DuBois, S.K. Jones, R. G. Frieser, Farid M. Tranjan |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Renewable Energy Sustainability and the Environment Chemistry Bilayer Analytical chemistry Photoresist Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Barrier layer Resist Etching (microfabrication) Materials Chemistry Electrochemistry Organic chemistry Thin film Mass fraction Inorganic compound |
| Zdroj: | Journal of The Electrochemical Society. 137:2276-2279 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2086927 |
| Popis: | Conventional photoresists have been modified by the incorporation of a phosphorus-containing compound, {ital i.e.}, phosphonitrilic chloride trimer (P{sub 3}N{sub 3}Cl{sub 6}). The modification was achieved by simply dissolving P{sub 3}N{sub 3}Cl{sub 6} (PNCT) in conventional photoresists. The phosphorus concentration varied from 5 weight percent (w/o) to 12 w/o in the modified photoresist films. These films formed a barrier layer when exposed to oxygen plasmas. After the layer was formed, no measurable resist etch rate could be detected. The resolution and mechanical properties of the modified resist films were essentially unchanged, although an increase by a factor of 1.5 in the exposure threshold was observed. Features of less than 1 {mu}m lines and spaces were anisotropically etched in polyamide masked by this photoresist. Furthermore, metal lift-off structures have been obtained using a bilayer process employing the modified resist. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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