Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films
| Autor: | Carleton H. Seager, E. Sigari, Jerzy Kanicki, M. S. Crowder, William L. Warren |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Silicon
business.industry Dangling bond General Physics and Astronomy chemistry.chemical_element medicine.disease_cause Amorphous solid law.invention chemistry.chemical_compound Silicon nitride chemistry law medicine Ultraviolet light Optoelectronics Thin film business Electron paramagnetic resonance Ultraviolet |
| Zdroj: | Journal of Applied Physics. 77:5730-5735 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We report results of electron paramagnetic resonance, photothermal deflection spectroscopy, and capacitance‐voltage measurements on amorphous hydrogenated silicon nitride (a‐SiNx:H) thin films exposed to ultraviolet (UV) illumination. It has been previously shown that exposure to UV light activates silicon dangling‐bond defects, i.e., K0 centers, in a‐SiNx:H thin films. Here, we demonstrate that the initially UV‐activated K0 center can be irreversibly annihilated at long illumination times. Because this effect seems to scale with H content of the measured films, we propose that hydrogen may be passivating the K0 defects during the extended UV exposure. We also show that films subjected to long UV exposures trap charge as efficiently as those having much larger K0 concentrations. A few possibilities to explain this effect are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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