Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Autor:	R. Hoffmann, Uwe Schröder, Lothar Frey, Thomas Mikolajick, T. S. Böscke, Johannes Müller
Rok vydání:	2012
Předmět:	Materials science business.industry Transistor Electrical engineering Nanosecond Ferroelectricity Electronic Optical and Magnetic Materials law.invention Threshold voltage Switching time Non-volatile memory Capacitor law MOSFET Optoelectronics Electrical and Electronic Engineering business
Zdroj:	IEEE Electron Device Letters. 33:185-187
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2011.2177435
Popis:	We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si:HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (MFIS) with poly-Si/TiN/Si:HfO2/SiO2/Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to 106 s suggest a retention of more than ten years.
Databáze:	OpenAIRE
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