A Device Performance Study of Stacked Gate Dielectrics AlGaN/GaN MOS-HEMTs by Mixed Oxide Thin Film Growth Techniques
| Autor: | W.F. Chen, E.L. Huang, Han-Yin Liu, Ching-Sung Lee, B.Y. Chou, C. S. Ho, Y.S. Wu, Wei-Chou Hsu, W.C. Ou |
|---|---|
| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2013.ps-6-4 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|