Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Autor:	Chi Ho Kim, Jun Young Byun, Won Kim, Sung Joon Yoon, Jong Hee Yoo, Byung Gu Gyun, Jang Won Oh, Te One Youn, Taeh Wan Kim, Wan Gee Kim, Sook Joo Kim, Ho Joung Kim, Jiwon Moon, Min Gyu Sung, Jae Sung Roh, Jung Nam Kim, Sung Ki Park, Moon Sig Joo, Ja Yong Kim
Rok vydání:	2010
Předmět:	Random access memory Materials science business.industry Oxide chemistry.chemical_element Resistive random-access memory chemistry.chemical_compound chemistry Transition metal Electrode Electronic engineering Optoelectronics Tin business Voltage
Zdroj:	2010 Proceedings of the European Solid State Device Research Conference.
DOI:	10.1109/essderc.2010.5618197
Popis:	In this paper, a systematic approach using HfO 2 , ZrO 2 and TiO 2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a TiN/Ti/HfO 2 /TiN structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d28bd8e22f51a96f33a7d21b66841155 https://doi.org/10.1109/essderc.2010.5618197 Zobrazit plný text záznamu